Title :
Nitrogen Vacancy and Magnetic Property in Cu-Doped AlN From First-Principles Calculations
Author :
Kang, Byung-Sub ; Lee, Jae-Kwang ; Chae, Kwang-Pyo ; Kim, Kyeong-Sub ; Zhang, Ying-De ; Yu, Seong-Cho ; Oh, Suhk-Kun
Author_Institution :
Dept. of Nano Sci. & Mech. Eng., Konkuk Univ., Chungju, South Korea
fDate :
4/1/2012 12:00:00 AM
Abstract :
The effects on the ferromagnetism of a nitrogen defect in Cu-doped AlN with a Cu concentration of 2.77-8.33% have been investigated by first-principles. For AI0.9723Cu0.0277N, a global magnetic moment of 1.46 μB/cell with a localized magnetic moment of 0.75 μB/Cu is found. The formation of Cu-Cu in AlN with the N vacancy (VN) is more energetically favorable than that without the VN. Hence, the Cu + VN state is produced easily. The Cu magnetic moment of Cu-Cu pair becomes very low by the weak 3d-3d spin coupling due to the spin-exchange interaction between Cu-3d and N defect states.
Keywords :
III-V semiconductors; ab initio calculations; aluminium compounds; copper compounds; defect states; doping profiles; electronic density of states; exchange interactions (electron); ferromagnetic materials; magnetic moments; semimagnetic semiconductors; vacancies (crystal); wide band gap semiconductors; 3d-3d spin coupling; Al0.9723Cu0.0277N; defect states; ferromagnetism; first-principles calculation; global magnetic moment; localized magnetic moment; magnetic properties; nitrogen vacancy; spin-exchange interaction; Copper; Doping; Frequency modulation; Magnetic moments; Magnetic semiconductors; Nitrogen; Photonic band gap; Cu-doped AIN; N defect; ferromagnetism; first-principles;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2011.2172930