Title :
Isotype heterojunctions with flat valence or conduction band
Author :
Babic, Dubravko I. ; Dohler, Gottfried H. ; Bowers, John E. ; Hu, Evelyn L.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
We show that isotype heterojunctions with a perfectly flat majority or minority carrier band edge can be realized by modulation doping of arbitrary continuous alloy grading. The required impurity distribution is obtained analytically from the knowledge of the compositional grading and band structure parameters in the grading. This analytic relationship is exact for heterojunctions in which the grading fields are negligible in comparison with the atomic fields. We illustrate the design of flat valence-band heterojunctions for application in high-reflectivity low-resistance distributed Bragg reflectors for vertical-cavity lasers. The presented formalism enables the design of isotype heterojunctions with arbitrary band-edge profiles
Keywords :
conduction bands; distributed Bragg reflector lasers; impurity distribution; impurity states; interface states; laser cavity resonators; minority carriers; semiconductor heterojunctions; semiconductor lasers; valence bands; analytic relationship; arbitrary continuous alloy grading; atomic fields; band structure parameters; band-edge profiles; compositional grading; flat conduction band; flat valence band; grading fields; high-reflectivity low-resistance distributed Bragg reflectors; impurity distribution; isotype heterojunctions; modulation doping; perfectly flat majority carrier band edge; perfectly flat minority carrier band edge; vertical-cavity lasers; Distributed Bragg reflectors; Doping; Electrostatics; Epitaxial layers; Heterojunctions; Mirrors; Photonic band gap; Power engineering and energy; Vertical cavity surface emitting lasers; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
