Precise patterning technique for Nb junctions using optical proximity correction

Author

Aoyagi, Masahiro ; Nakagawa, Hiroshi ; Sato, Hiroshi ; Akoh, Hiroshi

Author_Institution

Electrotech. Lab., Ibaraki, Japan

Volume

11

Issue

1

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

381

Lastpage

384

Abstract

In the fabrication process of Nb junctions, a precise and reliable lithography technique for a small junction area is needed to realize a wide-operating-margin circuit. We propose a patterning technique for micron or submicron Nb junctions using optical proximity correction (OPC). In the i-line optical lithography process, scattering bars and serifs are added to the photomask patterns for small junction area. Nb junctions ranging in size from 0.5-μm square to 2.0-μm square were successfully fabricated using this technique. For a square junction pattern, variations of junction critical current and shrinkage of the junction size are improved using OPC

Keywords

Josephson effect; niobium; photolithography; proximity effect (lithography); Nb; Nb Josephson junction; critical current; i-line lithography; optical proximity correction; patterning technique; photomask; submicron fabrication process; Bars; Critical current; Electron beams; Focusing; Josephson junctions; Light scattering; Lithography; Niobium; Optical device fabrication; Optical scattering;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.919362

Filename

919362