Design of 110–152 GHz rotary traveling wave oscillators in 65 nm CMOS technology

Author

Liangjin Wu ; Sebsebie, Rediet ; Kirkman-Bey, Monique ; Aidoo, Marvin ; Zhijian Xie ; Dogan, Numan S.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina A&T State Univ., Greensboro, NC, USA

fYear

2014

fDate

13-16 March 2014

Firstpage

1

Lastpage

4

Abstract

A novel rotary traveling wave oscillator (RTWO) is proposed to be an alternative architecture to generate THz signals for long distance high speed communication. As a preliminary work, the design of 110-152 GHz RTWO as the fundamental oscillators is reported in this paper. The transmission line ring, the n-transistor-only cross-coupled inverter pair (CCIP), and the bias-T for the oscillation have been investigated. RTWO with 113 GHz oscillation frequency is designed and layout in TSMC 65 nm CMOS process.

Keywords

CMOS analogue integrated circuits; coupled transmission lines; field effect MIMIC; millimetre wave oscillators; CCIP; RTWO; THz signal generation; TSMC CMOS process; bias-T; frequency 110 GHz to 152 GHz; fundamental oscillators; long distance high speed communication; n-transistor-only cross-coupled inverter pair; rotary traveling wave oscillator design; size 65 nm; transmission line ring; CMOS integrated circuits; Delays; Radio frequency; Semiconductor device modeling; bias-T; cross-coupled inverter pair (CCIP); rotary traveling wave oscillator (RTWO); transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

SOUTHEASTCON 2014, IEEE

Conference_Location

Lexington, KY

Type

conf

DOI

10.1109/SECON.2014.6950662

Filename

6950662