DocumentCode :
147510
Title :
A dual band passive RFID design in 0.18µm CMOS technology
Author :
Senadeera, Praharshin M. ; Dogan, Numan S. ; Zhijian Xie ; Savci, Huseyin S. ; Kateeb, Ibraheem
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina Agric. & Tech. State Univ., Greensboro, NC, USA
fYear :
2014
fDate :
13-16 March 2014
Firstpage :
1
Lastpage :
6
Abstract :
This paper presents a novel fully integrated passive X-band RFID transponder, implemented in IBM 0.18-μm RF CMOS technology. The tag was designed to keep the current dissipation in the whole system to a minimum, with special emphasis on RF-DC rectifier and the voltage sensor. Interaction between the building blocks of the RFID tag was investigated and the key design issues addressed in this paper include the design of low-power RFID building blocks. The simulation results demonstrated that the proposed low-power RFID transponder can properly operate under very low input power as well as complying with the universal RFID communication standard.
Keywords :
CMOS integrated circuits; low-power electronics; radiofrequency identification; radiofrequency integrated circuits; sensors; transponders; IBM RF CMOS technology; RF-DC rectifier; dual band passive RFID design; fully integrated X-band transponder; low-power design; radiofrequency identification building blocks; size 0.18 mum; universal communication standard; voltage sensor; CMOS integrated circuits; CMOS technology; Oscillators; Radio frequency; Radiofrequency identification; Rectifiers; Transponders; Injection lock LC oscillator; On-chip Antennas; RC oscillator; RF CMOS; RF-DC rectifier; Radio Frequency Identification (RFID); X-band; X-band power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOUTHEASTCON 2014, IEEE
Conference_Location :
Lexington, KY
Type :
conf
DOI :
10.1109/SECON.2014.6950663
Filename :
6950663
Link To Document :
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