Title :
Modeling coupled lines in 65 nm CMOS for millimeter-wave applications
Author :
Kirkman-Bey, Monique ; Sebsebie, Rediet ; Aidoo, Marvin ; Liangjin Wu ; Dogan, Numan ; Zhijian Xie
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina A&T State Univ., Greensboro, NC, USA
Abstract :
An analysis of the behavior of coupled lines in the 100-200 GHz frequency range is presented. Characterization of lumped and electromagnetic elements are included as a preliminary work to predict the behavior of the line in a Rotary Traveling Wave Oscillator (RTWO) integrated circuit. Using Sonnet and Agilent ADS, the simulated behavior of a coupled transmission line implemented in 65 nanometer CMOS is presented as well as the method used for modeling the lines.
Keywords :
coupled transmission lines; field effect MIMIC; oscillator strengths; oscillators; Agilent ADS; CMOS integrated circuits; RTWO; Sonnet; coupled transmission line; frequency 100 GHz to 200 GHz; millimeter-wave integrated circuits; rotary traveling wave oscillator; size 65 nm; Fitting; Integrated circuit modeling; Layout; Microstrip; Power transmission lines; Scattering parameters; Semiconductor device modeling; Transmission Lines; coupled microstrips; modeling and simulation;
Conference_Titel :
SOUTHEASTCON 2014, IEEE
Conference_Location :
Lexington, KY
DOI :
10.1109/SECON.2014.6950666
