DocumentCode :
1475159
Title :
A Multi-Level and Multi-Band Class-D CMOS Power Amplifier for the LINC System in the Cognitive Radio Application
Author :
Hur, Joonhoi ; Lee, Ockgoo ; Lee, Chang-Ho ; Lim, Kyutae ; Laskar, Joy
Author_Institution :
Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
20
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
352
Lastpage :
354
Abstract :
In this letter, a multi-level and multi-band Class-D CMOS power amplifier (PA) in a standard 0.18 ??m CMOS process is presented. Using multiple PMOS devices with control switches, the proposed PA improves efficiency with the multi-level operation. In order to enable the multi-band operation, the proposed PA employs a tunable series resonator. The measured maximum drain efficiencies were 72% and 70% for the low power mode and high power mode, respectively. The 3 dB bandwidth of the proposed system was from 450 MHz to 730 MHz, which covers the cognitive radio white spectrum standard. The measured EVM using a commercial 16QAM OFDM signal was -34 dB with a LINC system.
Keywords :
CMOS integrated circuits; OFDM modulation; UHF power amplifiers; cognitive radio; quadrature amplitude modulation; resonators; 16QAM OFDM signal; LINC system; bandwidth 450 MHz to 730 MHz; cognitive radio; multiband class D CMOS power amplifier; multilevel class D CMOS power amplifier; multiple PMOS devices; tunable series resonator; CMOS; Class-D PA; LINC; discrete power control; power amplifier (PA);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2047532
Filename :
5451155
Link To Document :
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