• DocumentCode
    147521
  • Title

    The design and development of bipolar junction transistor devices

  • Author

    Peng, Leon C. ; Addington, J. Shawn

  • Author_Institution
    Electr. & Comput. Eng., Virginia Mil. Inst., Lexington, VA, USA
  • fYear
    2014
  • fDate
    13-16 March 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The data confirm that a decrease in base dimension improves the performance of the bipolar junction transistor. In addition, modifications in design and procedures have improved the quantity and quality of the data collected. The devices produced in this project were functional but not ideal. Nevertheless, this project was able to produce a working BJT device with better performance characteristics than any BJT that has ever been produced in this lab. The designs and methods employed during this project, as well as data collected from this project, will improve the performance quality of future BJT devices produced in this lab.
  • Keywords
    bipolar transistors; base dimension; bipolar junction transistor devices; data collection quality; data collection quantity; working BJT device design; Lithography; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOUTHEASTCON 2014, IEEE
  • Conference_Location
    Lexington, KY
  • Type

    conf

  • DOI
    10.1109/SECON.2014.6950674
  • Filename
    6950674