DocumentCode
147521
Title
The design and development of bipolar junction transistor devices
Author
Peng, Leon C. ; Addington, J. Shawn
Author_Institution
Electr. & Comput. Eng., Virginia Mil. Inst., Lexington, VA, USA
fYear
2014
fDate
13-16 March 2014
Firstpage
1
Lastpage
2
Abstract
The data confirm that a decrease in base dimension improves the performance of the bipolar junction transistor. In addition, modifications in design and procedures have improved the quantity and quality of the data collected. The devices produced in this project were functional but not ideal. Nevertheless, this project was able to produce a working BJT device with better performance characteristics than any BJT that has ever been produced in this lab. The designs and methods employed during this project, as well as data collected from this project, will improve the performance quality of future BJT devices produced in this lab.
Keywords
bipolar transistors; base dimension; bipolar junction transistor devices; data collection quality; data collection quantity; working BJT device design; Lithography; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
SOUTHEASTCON 2014, IEEE
Conference_Location
Lexington, KY
Type
conf
DOI
10.1109/SECON.2014.6950674
Filename
6950674
Link To Document