DocumentCode :
147521
Title :
The design and development of bipolar junction transistor devices
Author :
Peng, Leon C. ; Addington, J. Shawn
Author_Institution :
Electr. & Comput. Eng., Virginia Mil. Inst., Lexington, VA, USA
fYear :
2014
fDate :
13-16 March 2014
Firstpage :
1
Lastpage :
2
Abstract :
The data confirm that a decrease in base dimension improves the performance of the bipolar junction transistor. In addition, modifications in design and procedures have improved the quantity and quality of the data collected. The devices produced in this project were functional but not ideal. Nevertheless, this project was able to produce a working BJT device with better performance characteristics than any BJT that has ever been produced in this lab. The designs and methods employed during this project, as well as data collected from this project, will improve the performance quality of future BJT devices produced in this lab.
Keywords :
bipolar transistors; base dimension; bipolar junction transistor devices; data collection quality; data collection quantity; working BJT device design; Lithography; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOUTHEASTCON 2014, IEEE
Conference_Location :
Lexington, KY
Type :
conf
DOI :
10.1109/SECON.2014.6950674
Filename :
6950674
Link To Document :
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