Title :
Fabrication and Characterization of the Charge-Plasma Diode
Author :
Rajasekharan, Bijoy ; Hueting, Raymond J E ; Salm, Cora ; Van Hemert, Tom ; Wolters, Rob A M ; Schmitz, Jurriaan
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
fDate :
6/1/2010 12:00:00 AM
Abstract :
We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.
Keywords :
Schottky diodes; elemental semiconductors; erbium; leakage currents; oxidation; palladium; plasma diodes; rectifiers; silicon; silicon-on-insulator; work function; Er; ON-OFF current ratios; Pd; Schottky-based rectifier; Si; back-gate biasing; charge-plasma diode; constant reverse leakage-current density; erbium metal contact; forward bias; forward mode; palladium metal contact; temperature 293 K to 298 K; thermal oxidation; ultrathin silicon-on-insulator; voltage 1 V; workfunction; Buried oxide (BOX); Schottky barrier; charge-plasma (CP) diode; diode; p-i-n diode; silicon-on-insulator (SOI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2045731
