Fabrication and Characterization of the Charge-Plasma Diode

Author

Rajasekharan, Bijoy ; Hueting, Raymond J E ; Salm, Cora ; Van Hemert, Tom ; Wolters, Rob A M ; Schmitz, Jurriaan

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

Volume

31

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

528

Lastpage

530

Abstract

We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 10⁷ at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

Keywords

Schottky diodes; elemental semiconductors; erbium; leakage currents; oxidation; palladium; plasma diodes; rectifiers; silicon; silicon-on-insulator; work function; Er; ON-OFF current ratios; Pd; Schottky-based rectifier; Si; back-gate biasing; charge-plasma diode; constant reverse leakage-current density; erbium metal contact; forward bias; forward mode; palladium metal contact; temperature 293 K to 298 K; thermal oxidation; ultrathin silicon-on-insulator; voltage 1 V; workfunction; Buried oxide (BOX); Schottky barrier; charge-plasma (CP) diode; diode; p-i-n diode; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2045731

Filename

5451180