Title :
Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
Author :
Kim, SungGeun ; Luisier, Mathieu ; Paul, Abhijeet ; Boykin, Timothy B. ; Klimeck, Gerhard
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
5/1/2011 12:00:00 AM
Abstract :
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum transport simulator based on an atomistic sp3d5s* tight-binding model. An interface between silicon and silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function. An oxide layer is modeled in a virtual crystal approximation using fictitious SiO2 atoms. 〈110〉-oriented NWs with different diameters and randomly generated surface configurations are studied. An experimentally observed on-current and threshold voltage are quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental data.
Keywords :
elemental semiconductors; field effect transistors; nanowires; semiconductor quantum wires; silicon; tight-binding calculations; 3D quantum transport simulator; Si; SiO2; atomistic interface roughness; atomistic representation; autocovariance function; field-effect transistors; interface roughness scattering; silicon dioxide layers; silicon layers; silicon nanowire FET; tight-binding model; virtual crystal approximation; Atomic layer deposition; Phonons; Rough surfaces; Scattering; Silicon; Surface roughness; Threshold voltage; Atomistic; Si gate-all-around (GAA) nanowire (NW) transistors; full-band simulations; interface roughness scattering (IRS);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2118213
