DocumentCode
1475663
Title
Nanometer scale masked ion damage barriers in YBa2Cu3O7-δ
Author
Kang, D.J. ; Speaks, R. ; Peng, N.H. ; Webb, R. ; Jeynes, C. ; Booij, W.E. ; Tarte, E.J. ; Moore, D.F. ; Blamire, M.G.
Author_Institution
Interdisciplinary Res. Centre in Superconductivity, Cambridge Univ., UK
Volume
11
Issue
1
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
780
Lastpage
783
Abstract
Josephson junctions have been formed in YBa2Cu3 O7-δ by ion implantation though apertures in 450 nm thick Au masks using 50 keV H implants with fluences up to 5×10 18 cm-2. The mask apertures were milled with a focused 30 keV Ga ion beam giving a best measured electrical junction length of about 70 nm. Resistively shunted junction behavior has been observed over a wide temperature range (about 10 K). Shapiro steps have also been measured on these devices. The influence of possible Ga contamination is discussed
Keywords
Josephson effect; barium compounds; focused ion beam technology; high-temperature superconductors; ion implantation; nanotechnology; yttrium compounds; 30 keV; 50 keV; Au; Au mask aperture; Ga; Ga contamination; Ga focused ion beam milling; H; H ion implantation; Josephson junction; Shapiro step; YBa2Cu3O7-δ; YBa2Cu3O7; electrical junction length; nanometer scale masked ion damage barrier; resistively shunted junction; Apertures; Electric variables measurement; Gold; Implants; Ion beams; Ion implantation; Josephson junctions; Length measurement; Pollution measurement; Temperature distribution;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.919461
Filename
919461
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