Title :
Analysis of QD VCSEL Dynamic Characteristics Considering Homogeneous and Inhomogeneous Broadening
Author :
Abbaspour, Hadis ; Ahmadi, Vahid ; Yavari, Mohammad Hasan
Author_Institution :
Dept. of Electr. Eng., Modares Univ., Tehran, Iran
Abstract :
In this paper, for the first time we present a self-consistent opto-electro-thermal model to analyze the influence of homogeneous and inhomogeneous broadening on the modulation response of 1.3-μm oxide-confined quantum dot InGaAs-GaAs vertical cavity surface emitting laser. In this model, the dependence of 3-dB bandwidth on the self-heating effect is discussed and the influence of inhomogeneous broadening on frequency response is studied. We show that there is an optimized amount of injected current density for the highest maximum bandwidth.
Keywords :
III-V semiconductors; current density; frequency response; gallium arsenide; indium compounds; laser cavity resonators; optical modulation; quantum dot lasers; spectral line broadening; surface emitting lasers; InGaAs-GaAs; QD VCSEL dynamics; current density; frequency response; homogeneous broadening; inhomogeneous broadening; modulation response; oxide-confined quantum dot; self-consistent opto-electro-thermal model; self-heating effect; vertical cavity surface emitting laser; wavelength 1.3 mum; Bandwidth; Current density; Equations; Mathematical model; Modulation; Nonhomogeneous media; Vertical cavity surface emitting lasers; Homogeneous and inhomogeneous broadening; modulation response; quantum dot (QD); vertical cavity surface emitting laser (VCSEL);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2107570
