DocumentCode :
1476019
Title :
A D-Band Cascode Amplifier With 24.3 dB Gain and 7.7 dBm Output Power in 0.13 
m SiGe BiCMOS Technology
Author :
Hou, Debin ; Xiong, Yong-Zhong ; Goh, Wang-Ling ; Hong, Wei ; Madihian, Mohammad
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Volume :
22
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
191
Lastpage :
193
Abstract :
This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS technology. The amplifier is implemented with low-loss transformer for inter-stage matching and single-to-differential transformation. The large-signal characteristics of the cascode HBT configuration are used to optimize the bias condition for highest output power and gain performance. A measured amplifier achieves a peak power gain of 24.3 dB, with a 3 dB bandwidth of 20 GHz centered at 130 GHz. The amplifier exhibits a saturated output power of 7.7 dBm and an output 1 dB gain compression point of 6 dBm with a power consumption of 84 mW. The measured noise figure is 6.8 dB at 130 GHz and stays under 8 dB over the 3 dB bandwidth. To the best of our knowledge, the proposed amplifier exhibits the highest gain and output power among the silicon-based D-band amplifiers reported so far.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; millimetre wave amplifiers; millimetre wave bipolar transistors; semiconductor materials; transformers; D-band 3-stage cascode amplifier; IHP BiCMOS technology; SiGe; bandwidth 20 GHz; cascode HBT configuration; frequency 130 GHz; gain 1 dB; gain 24.3 dB; inter-stage matching; large-signal characteristics; low-loss transformer; noise figure 6.8 dB; power 84 mW; power consumption; silicon-based D-band amplifiers; single-to-differential transformation; size 0.13 mum; BiCMOS integrated circuits; Gain; Noise; Noise measurement; Power amplifiers; Power generation; Silicon germanium; Cascode; D-band amplifier; SiGe BiCMOS; large-signal; millimetre-wave; transformer;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2188624
Filename :
6172615
Link To Document :
