Wafer Level High-Speed Germanium Photodiode Array Integration

Author

Kopp, Christophe ; Ferron, Alexandre ; Hartmann, Jean-Michel ; Fournier, Maryse ; Augendre, Emmanuel ; Grosse, Philippe ; Fedeli, Jean-Marc ; Derks, Henk

Author_Institution

LETI, CEA, Grenoble, France

Volume

17

Issue

3

fYear

2011

Firstpage

526

Lastpage

530

Abstract

High-density germanium photodiode arrays are integrated on top of a dummy CMOS 200-mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested photodiodes with respect to bandwidth, responsivity, and dark current. A very low dark current density in the range of 7 mA/cm² is obtained. A median bandwidth above 9 GHz is reached with a large 30-μm diameter photodiode.

Keywords

CMOS integrated circuits; current density; elemental semiconductors; germanium; high-speed integrated circuits; high-speed optical techniques; integrated optics; optical fabrication; photodiodes; CMOS silicon wafer; Ge; Si; bandwidth responsivity; dark current density; high-speed germanium photodiode array integration; median bandwidth; semiconductor fabrication; size 200 mm; size 30 mum; Arrays; Bandwidth; CMOS integrated circuits; Germanium; Photodiodes; Photonics; Silicon; Germanium compounds; hybrid integrated circuit packaging; photodetectors; silicon on insulator technology;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2011.2108639

Filename

5735163