Title :
Single-Facet Teardrop Laser With Matched-Bends Design
Author :
Yuan, Wangqing ; Seibert, Christopher S. ; Hall, Douglas C.
Author_Institution :
Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
The matched-bends criterion, a method for effectively reducing the straight-bend-straight transition loss in planar optical waveguides, is applied to design a single-facet teardrop laser utilizing an on-chip loop mirror reflector. Simulations of a matched-bends teardrop reflector show a great improvement in power reflectance (97%) over unmatched-bends designs (10%). The teardrop laser is fabricated by deep etching and nonselective sidewall oxidation of an 808-nm AlGaAs/InAlGaAs/GaAs heterostructure. The resulting high-index-contrast ridge-waveguide laser exhibits a low-threshold current of 43 mA, a high slope efficiency of 0.465 W/A, and a single spectral lasing mode with a side-mode suppression ratio of 24 dB. Simulations are presented to demonstrate that the matched-bends design can be scaled geometrically to reduce the area occupied by the teardrop bend reflector by a factor of 677.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; integrated optoelectronics; laser beams; laser mirrors; laser modes; optical design techniques; optical fabrication; optical losses; optical planar waveguides; oxidation; ridge waveguides; semiconductor lasers; waveguide lasers; AlGaAs-InAlGaAs-GaAs; current 43 mA; deep etching; heterostructure laser; high-index-contrast ridge-waveguide laser; low-threshold current; matched-bend design; matched-bend teardrop reflector; nonselective sidewall oxidation; on-chip loop mirror reflector; planar optical waveguides; power reflectance; side-mode suppression ratio; single spectral lasing mode; single-facet teardrop laser; slope efficiency; straight-bend-straight transition loss; unmatched-bend designs; wavelength 808 nm; Couplers; Integrated optoelectronics; Laser modes; Mirrors; Semiconductor lasers; Waveguide lasers; Waveguide transitions; Cavity mirrors; integrated optoelectronics; semiconductor lasers; waveguide bends;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2111360