Title :
Reset Switching Probability of Resistive Switching Devices
Author :
Chen, An ; Lin, Ming-Ren
Author_Institution :
Strategic Technol. Group, GLOBAL FOUNDRIES, Sunnyvale, CA, USA
fDate :
5/1/2011 12:00:00 AM
Abstract :
The reset switching probability of resistive switching devices is characterized in array testing. The measured switching probability can be quantitatively explained based on the mechanism of a thermally activated reset process. An analytical model of switching probability is developed to describe the dependence of reset probability on operation parameters, including applied voltage, selection transistor gate voltage, and pulsewidth. The close fitting of the model with measurement also confirms the thermal reset mechanism. This quantitative switching probability model can be used to extrapolate key device parameters and may provide important guidance in yield improvement and memory evaluation.
Keywords :
CMOS memory circuits; MIM devices; circuit testing; copper compounds; integrated circuit modelling; probability; switching circuits; Cu2O; MIM device; applied voltage; array testing; memory arrays; pulsewidth; reset switching probability; resistive switching devices; selection transistor gate voltage; storage capacity 64 Kbit; thermal activated reset process; thermal reset mechanism; Arrays; MIM devices; Probability; Resistance; Switches; Transistors; Voltage measurement; Resistive switching; switching probability; yield;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2109933
