Title :
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Author :
Chu, Rongming ; Corrion, Andrea ; Chen, Mary ; Li, Ray ; Wong, Danny ; Zehnder, Daniel ; Hughes, Brian ; Boutros, Karim
Author_Institution :
HRL Labs., Malibu, CA, USA
fDate :
5/1/2011 12:00:00 AM
Abstract :
This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.
Keywords :
atomic layer deposition; electric breakdown; field effect transistors; gallium compounds; halides; substrates; Al2O3; GaN; GaN-on-Si field-effect transistors; Si substrates; atomic layer deposition; breakdown voltage; gate leakage current; halide-based plasma treatment; high-voltage GaN field-effect transistors; high-voltage operation; low dynamic on-resistance; source electrode; Aluminum gallium nitride; Degradation; FETs; Gallium nitride; Logic gates; Silicon; Switches; Dynamic on-resistance; GaN; field plate; field-effect transistor; gate insulator; power switch;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2118190
