Title :
-Based MSM Ultraviolet Detectors With Pt Electrodes
Author :
Zhang, Haifeng ; Ruan, Shengping ; Xie, Tianjiao ; Feng, Caihui ; Qu, Pengfei ; Chen, Weiyou ; Dong, Wei
Author_Institution :
Coll. of Electron. Sci. & Eng., Jilin Univ., Changchun, China
fDate :
5/1/2011 12:00:00 AM
Abstract :
In this letter, visible-blind ultraviolet (UV) photodetectors based on Zr0.27Ti0.73O2 thin films with Pt electrodes were fabricated. The Zr0.27Ti0.73O2 thin films were prepared via the sol-gel method and characterized by means of X-ray diffraction, scanning electron microscopy, XPS, and UV-visible absorption spectra. At 5-V bias, the dark current of the detector was only 6 nA. Under the irradiation of 300-nm UV light, a high responsivity of 702.5 A/W was achieved due to the high internal gain. The high gain is caused by the introduction of zirconia. The rise and fall times of the device were 896.6 and 578.1 ms, respectively. Compared with TiO2-based detectors, the Zr0.27Ti0.73O2-based detector with Pt electrodes exhibits a much higher responsivity, a faster recovery time, and a wider detection range.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; electrodes; platinum; scanning electron microscopy; semiconductor thin films; sol-gel processing; ultraviolet detectors; ultraviolet spectra; visible spectra; wide band gap semiconductors; zirconium compounds; MSM ultraviolet detectors; UV light irradiation; UV-visible absorption spectra; X-ray diffraction; XPS; Zr0.27Ti0.73O2; dark current; internal gain; platinum electrodes; scanning electron microscopy; sol-gel method; thin films; visible-blind ultraviolet photodetectors; zirconia; Dark current; Detectors; Electrodes; Photoconductivity; Photodetectors; Radiation effects; Schottky barriers; $hbox{Zr}_{x}hbox{Ti}_{1 - x}hbox{O}_{2}$; Pt electrodes; sol–gel; ultraviolet (UV) detector;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2110633