Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in $\\hbox {TiO}_{2}$ -Based Unipolar Resistive Memory

Author

Zhao, Liang ; Zhang, Jinyu ; He, Yu ; Guan, Ximeng ; Qian, He ; Yu, Zhiping

Author_Institution

Tsinghua Univ., Beijing, China

Volume

32

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

677

Lastpage

679

Abstract

In this letter, atomistic-level models and simulations of unipolar TiO₂ RRAM are addressed. A dynamic model of SET/RESET is developed based on recent experimental findings, which attributes SET to oxygen vacancy (V_O) drift and Ti₄O₇ conductive filament (CF) growth, while RESET is explained by the melting of Ti₄O₇ CF and subsequent (V_O) diffusion and recombination. Based on the model, electro-thermal and molecular dynamics simulations are carried out to reproduce the complete switching cycle at an atomistic level.

Keywords

circuit simulation; integrated circuit modelling; random-access storage; RESET operation; SET operations; atomistic simulation; atomistic-level model; conductive filament growth; dynamic modeling; electro-thermal simulation; molecular dynamics simulation; oxygen vacancy drift; unipolar RRAM; unipolar resistive memory; Anodes; Conductivity; Heating; Mathematical model; Switches; $hbox{TiO}_{2}$-based unipolar resistive memory (RRAM); Electro-thermal calculation; molecular dynamics (MD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2115990

Filename

5735188

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in -Based Unipolar Resistive Memory

Zhao, Liang ; Zhang, Jinyu ; He, Yu ; Guan, Ximeng ; Qian, He ; Yu, Zhiping

jour

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in $\\hbox {TiO}_{2}$ -Based Unipolar Resistive Memory