DocumentCode :
1476199
Title :
Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in 
-Based Unipolar Resistive Memory
Author :
Zhao, Liang ; Zhang, Jinyu ; He, Yu ; Guan, Ximeng ; Qian, He ; Yu, Zhiping
Author_Institution :
Tsinghua Univ., Beijing, China
Volume :
32
Issue :
5
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
677
Lastpage :
679
Abstract :
In this letter, atomistic-level models and simulations of unipolar TiO2 RRAM are addressed. A dynamic model of SET/RESET is developed based on recent experimental findings, which attributes SET to oxygen vacancy (VO) drift and Ti4O7 conductive filament (CF) growth, while RESET is explained by the melting of Ti4O7 CF and subsequent (VO) diffusion and recombination. Based on the model, electro-thermal and molecular dynamics simulations are carried out to reproduce the complete switching cycle at an atomistic level.
Keywords :
circuit simulation; integrated circuit modelling; random-access storage; RESET operation; SET operations; atomistic simulation; atomistic-level model; conductive filament growth; dynamic modeling; electro-thermal simulation; molecular dynamics simulation; oxygen vacancy drift; unipolar RRAM; unipolar resistive memory; Anodes; Conductivity; Heating; Mathematical model; Switches; $hbox{TiO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2115990
Filename :
5735188
Link To Document :
