DocumentCode
1476243
Title
Development of sub-micron SNS ramp-type Josephson junctions
Author
Hagedorn, Daniel ; Dolata, Ralf ; Pöpel, Ralf ; Buchholz, Friedrich-Immanuel ; Niemeyer, Jürgen
Author_Institution
Phys. Tech. Bundesanstalt, Braunschweig, Germany
Volume
11
Issue
1
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
1134
Lastpage
1137
Abstract
At PTB, a fabrication technology for sub-micron superconductor-normal metal-superconductor (SNS) ramp-type Josephson junctions has been developed which allows these junctions to be used as active elements in highly integrated circuits. Test circuits of series arrays containing up to 10000 junctions with contact areas below 0.4 μm2 and of single junctions with contact areas reduced down to 0.03 μm2 have been successfully realized and measured. To achieve high values of the characteristic voltage Vc , different N-layer materials, i.e. Al, PdAu and HfTi with thicknesses down to d=15 nm and different layer sequences have been investigated. Typical parameters of SNS junctions with a thickness of the HfTi N-layer of d=20nm are about jc=470 kA/cm2 and Vc=100 μV. The junctions realized allow for application in superconducting circuits
Keywords
Josephson effect; superconducting arrays; superconducting integrated circuits; superconductor-normal-superconductor devices; Al; HfTi; PdAu; active element; fabrication technology; series array; submicron SNS ramp-type Josephson junction; superconducting integrated circuit; Circuit testing; Fabrication; High temperature superconductors; Integrated circuit technology; Josephson junctions; Niobium; Superconducting devices; Superconducting epitaxial layers; Superconducting integrated circuits; Voltage;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.919548
Filename
919548
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