• DocumentCode
    1476243
  • Title

    Development of sub-micron SNS ramp-type Josephson junctions

  • Author

    Hagedorn, Daniel ; Dolata, Ralf ; Pöpel, Ralf ; Buchholz, Friedrich-Immanuel ; Niemeyer, Jürgen

  • Author_Institution
    Phys. Tech. Bundesanstalt, Braunschweig, Germany
  • Volume
    11
  • Issue
    1
  • fYear
    2001
  • fDate
    3/1/2001 12:00:00 AM
  • Firstpage
    1134
  • Lastpage
    1137
  • Abstract
    At PTB, a fabrication technology for sub-micron superconductor-normal metal-superconductor (SNS) ramp-type Josephson junctions has been developed which allows these junctions to be used as active elements in highly integrated circuits. Test circuits of series arrays containing up to 10000 junctions with contact areas below 0.4 μm2 and of single junctions with contact areas reduced down to 0.03 μm2 have been successfully realized and measured. To achieve high values of the characteristic voltage Vc , different N-layer materials, i.e. Al, PdAu and HfTi with thicknesses down to d=15 nm and different layer sequences have been investigated. Typical parameters of SNS junctions with a thickness of the HfTi N-layer of d=20nm are about jc=470 kA/cm2 and Vc=100 μV. The junctions realized allow for application in superconducting circuits
  • Keywords
    Josephson effect; superconducting arrays; superconducting integrated circuits; superconductor-normal-superconductor devices; Al; HfTi; PdAu; active element; fabrication technology; series array; submicron SNS ramp-type Josephson junction; superconducting integrated circuit; Circuit testing; Fabrication; High temperature superconductors; Integrated circuit technology; Josephson junctions; Niobium; Superconducting devices; Superconducting epitaxial layers; Superconducting integrated circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.919548
  • Filename
    919548