Double-barrier Josephson junctions: theory and experiment

Author

Brinkman, A. ; Cassel, D. ; Golubov, A.A. ; Kupriyanov, M.Yu. ; Siegel, M. ; Rogalla, H.

Author_Institution

Dept. of Appl. Phys., Twente Univ., Enschede, Netherlands

Volume

11

Issue

1

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

1146

Lastpage

1149

Abstract

New theoretical and experimental results on double-barrier SIS´IS Josephson junctions are presented (I is a tunnel barrier, S´ is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS´IS junctions with high critical current density and I_cR _N products. A comparison with single-barrier SIS junctions with high critical current density is carried out

Keywords

Josephson effect; aluminium; critical current density (superconductivity); niobium; Nb-Al-Nb; critical current density; critical current-normal resistance product; current-voltage characteristics; double-barrier SISIS Josephson junction; hysteresis; interface barrier; nonstationary properties; shunting resistance; Critical current; Critical current density; Current-voltage characteristics; Equations; Josephson junctions; Kinetic theory; Microscopy; Niobium; Temperature; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.919551

Filename

919551