Title :
Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via
Author :
Liu, En-Xiao ; Li, Er-Ping ; EWE, Wei-Bin ; Lee, Hui Min ; Lim, Teck Guan ; Gao, Shan
Author_Institution :
Electron. & Photonics Dept., A*STAR, Singapore, Singapore
fDate :
6/1/2011 12:00:00 AM
Abstract :
This paper presents a compact wideband equivalent circuit model for electrical modeling of through-silicon vias (TSVs) in 3-D stacked integrated circuits and packaging. Rigorous closed form formulas for the resistance and inductance of TSVs are de rived from the magneto-quasi-static theory with a Fourier-Bessel expansion approach, whereas analytical formulas from static solutions are used to compute the capacitance and conductance. The equivalent-circuit model can capture the important parasitic effects of TSVs, including the skin effect, proximity effect, lossy effect of silicon, and semiconductor effect. Therefore, it yields accurate results comparable to those with 3-D full-wave solvers.
Keywords :
Bessel functions; Fourier analysis; integrated circuit modelling; integrated circuit packaging; three-dimensional integrated circuits; 3D full-wave solvers; 3D stacked integrated circuits; 3D stacked packaging; Fourier-Bessel expansion approach; TSV; compact wideband equivalent-circuit model; electrical modeling; lossy effect; magneto-quasistatic theory; parasitic effect; proximity effect; semiconductor effect; skin effect; through-silicon vias; Computational modeling; Conductors; Inductance; Integrated circuit modeling; Resistance; Through-silicon vias; Wideband; 3-D integrated circuits (ICs) and packaging; Compact wideband equivalent-circuit model; Fourier–Bessel expansion; through-silicon via (TSV);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2011.2116039
