• DocumentCode
    147636
  • Title

    Design and simulation of piezoresistive MEMS accelerometer for the detection of pathological tremor

  • Author

    Biswas, Santosh ; Gogoi, Anup Kumar

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Indian Inst. of Technol., Guwahati, Guwahati, India
  • fYear
    2014
  • fDate
    13-16 March 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper reports the design and simulation of microelectromechanical (MEMS) piezoresistive accelerometer used in a strapdown inertial measurement unit (IMU) for detection of pathological tremor. There is a demand for high performance micromachined accelerometer to build a reliable tremor diagnostic system. The performance mainly depends on geometric design, device sensing mechanism with respect to different material properties, noise and offsets in the associated electronic circuits and fabrication limitations. The work is aimed at realizing a piezoresistive inertial sensor for diagnostic purpose of pathological tremor occurring mainly in patients suffering from thyrotoxicosis and several neurodegenerative disorders.The geometric configuration of the inertial sensor designed consists of a structure which includes a square seismic mass with four flexures implanted with eight P- type single crystal silicon (110) piezoresistors. The design configuration chosen in terms of length, width and thickness are Seismic-mass-3200μm×3200μm×250μm,Flexures-1000μm × 250μm × 20μm,Frame-5200μm × 230μm × 250μm, piezoresistors -100μm × 25μm × 2μm.The device has been designed for a frequency range of (0.1-25 Hz) and a dynamic range of ±2g The cross axis sensitivity has been reduced by using a Wheatstone bridge configuration which enhances the sensitivity of the sensor and the system as a whole. Eigen frequency decides the sensitivity of the device; the structure has been simulated at different Eigen modes. Flexure thickness has been optimized because sensitivity is found to reduce with increase in flexure thickness. Stress analysis has been carried out and maximum stress is obtained at the edges and maximum deflection occurs at the piezo-junction of flexure and proofmass.
  • Keywords
    biomedical electronics; biomedical equipment; diseases; elemental semiconductors; medical disorders; micromechanical devices; neurophysiology; patient diagnosis; piezoelectric semiconductors; piezoelectric transducers; piezoresistive devices; resistors; silicon; stress analysis; Eigen frequency; Eigen modes; P-type single crystal silicon (110) piezoresistors; Si; Wheatstone bridge configuration; cross axis sensitivity; design configuration; electronic circuits; flexure thickness; frequency 0.1 Hz to 25 Hz; geometric configuration; high performance micromachined accelerometer; inertial measurement unit; inertial sensor; maximum deflection; maximum stress; microelectromechanical piezoresistive accelerometer simulation; neurodegenerative disorders; pathological tremor detection; piezojunction flexure; piezoresistive MEMS accelerometer design; piezoresistive MEMS accelerometer simulation; piezoresistive inertial sensor; reliable tremor diagnostic system; sensor sensitivity; square seismic mass; stress analysis; thyrotoxicosis; Accelerometers; Pathology; Performance evaluation; Piezoresistive devices; Robot sensing systems; Sensitivity; Stress; EigenMode; MEMS Accelerometer; Piezoresistive;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOUTHEASTCON 2014, IEEE
  • Conference_Location
    Lexington, KY
  • Type

    conf

  • DOI
    10.1109/SECON.2014.6950742
  • Filename
    6950742