Microwave CMOS-device physics and design

Author

Manku, Tajinder

Author_Institution

Center for Wireless Commun., Waterloo Univ., Ont., Canada

Volume

34

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

277

Lastpage

285

Abstract

This paper discusses design issues and the microwave properties of CMOS devices. A qualitative understanding of the microwave characteristics of MOS transistors is provided. The paper is directed toward helping analog IC circuit designers create better front end radio-frequency CMOS circuits. The network properties of CMOS devices, the frequency response, and the microwave noise properties are reviewed, and a summary of the microwave scaling rules is presented

Keywords

CMOS analogue integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; equivalent circuits; field effect MMIC; frequency response; integrated circuit design; integrated circuit modelling; integrated circuit noise; microwave field effect transistors; semiconductor device models; MOS transistors; analog IC circuit design; design issues; device physics; frequency response; front end RF CMOS circuits; microwave CMOS; microwave characteristics; microwave noise properties; microwave scaling rules; Analog integrated circuits; CMOS analog integrated circuits; CMOS integrated circuits; Frequency response; Integrated circuit noise; MOSFETs; Microwave devices; Physics; Radio frequency; Radiofrequency integrated circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.748178

Filename

748178