Performance and reliability comparison between asymmetric and symmetric LDD devices and logic gates

Author

Chen, Jone F. ; Tao, Jiang ; Fang, Peng ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

34

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

367

Lastpage

371

Abstract

The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed V_dd, asymmetric LDD devices exhibit higher I_dsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V_dd while higher I_dsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared

Keywords

CMOS logic circuits; MOSFET; carrier lifetime; hot carriers; integrated circuit reliability; logic gates; semiconductor device reliability; NAND structures; NMOSFET; NOR structures; PMOSFET; asymmetric LDD devices; hot-carrier lifetime; hot-carrier reliability; inverter structure; lightly doped drain devices; logic gates; performance comparison; reliability comparison; ring oscillators; symmetric LDD devices; Delay; Hot carriers; Integrated circuit reliability; Inverters; Logic devices; Logic gates; MOS devices; MOSFET circuits; Maintenance; Ring oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.748188

Filename

748188