Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

Author

Park, G. ; Huffaker, D.L. ; Zou, Z. ; Shchekin, O.B. ; Deppe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

11

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

301

Lastpage

303

Abstract

Data are presented on the temperature dependence of 1.3-μm wavelength quantum-dot (QD) lasers. A low-threshold current density of 90 A/cm² is achieved at room temperature using high reflectivity coatings. Despite the low-threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occurring above /spl sim/225 K. Our results suggest that very low threshold current density (/spl les/20 A/cm²) can be achieved at room temperature from 1.3-μm QD lasers, once nonradiative recombination is eliminated."

Keywords

III-V semiconductors; current density; gallium arsenide; laser beams; laser variables measurement; optical films; quantum well lasers; reflectivity; semiconductor quantum dots; surface recombination; waveguide lasers; 1.3 mum; 225 K; 298 K; GaAs; GaAs-based quantum-dot lasers; high reflectivity coatings; higher temperatures; lasing; lasing characteristics; long-wavelength lasers; low-threshold current density; nonradiative recombination; quantum-dot lasers; room temperature; temperature dependence; threshold current; very low threshold current density; Coatings; Land surface temperature; Quantum dot lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Surface emitting lasers; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.748215

Filename

748215