Delay time in GaAs high-power photoconductive switches

Author

Du, Zhengwei ; Gong, Ke ; Meng, Fanbao ; Yang, Zhoubing

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

Volume

11

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

337

Lastpage

339

Abstract

The delay time defined as the time interval between the beginning of optical illumination and the onset of switching in photocurrent in gallium arsenide (GaAs) high-power photoconductivity switches is studied on the basis of electroabsorption caused by absorption edge shifting due to bandgap narrowing. The influences of the initial open-state field, the laser wavelength and the temperature are given. The results show it is the reflection and the transmission of the switch semiconductor slab indicated by the absorption fraction express the absorption rate of the illumination energy by the switch.

Keywords

III-V semiconductors; electro-optical switches; electroabsorption; gallium arsenide; photoconducting switches; photoconductivity; power semiconductor switches; GaAs; absorption edge shifting; absorption fraction; absorption rate; bandgap narrowing; delay time; electroabsorption; high-power photoconductive switches; high-power photoconductivity switches; illumination energy; initial open-state field; laser wavelength; optical illumination; reflection; switch semiconductor slab; switching onset; temperature; time interval; transmission; Absorption; Delay effects; Gallium arsenide; Lighting; Optical reflection; Optical switches; Photoconductivity; Photonic band gap; Semiconductor lasers; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.748227

Filename

748227