Title :
Delay time in GaAs high-power photoconductive switches
Author :
Du, Zhengwei ; Gong, Ke ; Meng, Fanbao ; Yang, Zhoubing
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fDate :
3/1/1999 12:00:00 AM
Abstract :
The delay time defined as the time interval between the beginning of optical illumination and the onset of switching in photocurrent in gallium arsenide (GaAs) high-power photoconductivity switches is studied on the basis of electroabsorption caused by absorption edge shifting due to bandgap narrowing. The influences of the initial open-state field, the laser wavelength and the temperature are given. The results show it is the reflection and the transmission of the switch semiconductor slab indicated by the absorption fraction express the absorption rate of the illumination energy by the switch.
Keywords :
III-V semiconductors; electro-optical switches; electroabsorption; gallium arsenide; photoconducting switches; photoconductivity; power semiconductor switches; GaAs; absorption edge shifting; absorption fraction; absorption rate; bandgap narrowing; delay time; electroabsorption; high-power photoconductive switches; high-power photoconductivity switches; illumination energy; initial open-state field; laser wavelength; optical illumination; reflection; switch semiconductor slab; switching onset; temperature; time interval; transmission; Absorption; Delay effects; Gallium arsenide; Lighting; Optical reflection; Optical switches; Photoconductivity; Photonic band gap; Semiconductor lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
