Title :
Array of Two UV-Wavelength Detector Types
Author :
Ngu, Yves ; Peckerar, M.C. ; Sander, D. ; Eddy, Charles R., Jr. ; Mastro, Michael A. ; Hite, Jennifer K. ; Holm, R.T. ; Henry, R.L. ; Tuchman, A.
Author_Institution :
Microelectron. Div., Device Modeling Group, IBM, Burlington, VT, USA
fDate :
6/1/2010 12:00:00 AM
Abstract :
An approach to fabricate a set of simultaneously operating dual-UV-wavelength detectors is described. The fabrication flow relies on the confined-epitaxy growth method. The confined epitaxial AlxGa1-xN-layer stacking approach is used to establish simultaneous multiple UV-wavelength detection. The chosen stoichiometries of specific epitaxial layers set the wavelength sensitivity at approximately 355 nm for pixel A and 320 nm for pixel B. Spectral responsivity plots of the detectors clearly show the dual-UV-color sensitivity of the pair. The detectors have signal-to-noise ratios of 15 and 17 and spectral responsivity values of 0.12 AAV and 0.05 AAV for pixel A and pixel B, respectively.
Keywords :
aluminium compounds; gallium compounds; semiconductor epitaxial layers; ultraviolet detectors; wide band gap semiconductors; AlxGa1-xN; confined epitaxial AlxGa1-xN-layer stacking approach; dual-UV-color sensitivity; dual-UV-wavelength detectors; epitaxial layers; signal-to-noise ratios; spectral responsivity; wavelength sensitivity; Aluminum alloys; Detectors; Fabrication; Gallium alloys; Heterojunctions; Laboratories; Leak detection; Leakage current; Object detection; Semiconductor materials; Sensor arrays; Substrates; Solid-state imagers; UV imaging; wide band-gap semiconductor applications;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2045706
