Title :
Electron mobilities in MOS channels formed along anisotropically dry etched [110] silicon trench sidewalls
Author_Institution :
Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA
fDate :
4/25/1991 12:00:00 AM
Abstract :
Experimental silicon trench MOSFET structures were fabricated and used to estimate electron mobilities in MOS channels formed along [110] trench sidewalls. A channel electron mobility approaching 87% of its bulk value can be obtained. These results were derived from a novel trench fabrication process, measured MOSFET drain current-voltage characteristics and accurate two-dimensional device simulations of MOSFET transfer characteristics.
Keywords :
carrier mobility; insulated gate field effect transistors; semiconductor technology; MOS channels; MOSFET transfer characteristics; Si trench sidewalls; [110] trench sidewalls; anisotropically dry etched; channel electron mobility; electron mobilities estimation; measured MOSFET drain current-voltage characteristics; trench MOSFET structures; trench fabrication process; two-dimensional device simulations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910445
