A Compact Ku-Band SiGe Power Amplifier MMIC With On-Chip Active Biasing

Author

Noh, Y.S. ; Uhm, M.S. ; Yom, I.B.

Author_Institution

Satellite & Wireless Convergence Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

20

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

349

Lastpage

351

Abstract

A Ku-band power amplifier monolithic microwave integrated circuit (MMIC) with an output power density of 726 mW/mm² is demonstrated using 0.25 ??m SiGe BiCMOS technology. No inductor matching scheme is applied to minimize the MMIC size, but an active biasing topology is used to enhance the power-added efficiency (PAE) and linearity of the MMIC. The fabricated one-stage cascode power amplifier MMIC, including input/output matching and biasing circuits, has a compact size of 0.384 mm² (0.6 mm ?? 0.64 mm), and exhibits a saturated output power (Psat) of 24.45 dBm and a PAE of 29.1 % at 14 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; BiCMOS technology; MMIC; PAE; SiGe; compact ku-band power amplifier; inductor matching scheme; monolithic microwave integrated circuit; on-chip active biasing; one-stage cascode power amplifier fabrication; output power density; power-added efficiency; size 0.25 mum; Cascode; Ku-band; heterojunction bipolar transistor (HBT); power amplifier (PA); silicon germanium (SiGe);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2047530

Filename

5453082