DocumentCode :
1477640
Title :
A programmable BIST core for embedded DRAM
Author :
Huang, Chih-Tsun ; Huang, Jing-Reng ; Wu, Chi-Feng ; Wu, Cheng-Wen ; Chang, Tsin-Yuan
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
16
Issue :
1
fYear :
1999
Firstpage :
59
Lastpage :
70
Abstract :
The programmable BIST design presented here supports various test modes using a simple controller. With the March C algorithm, the BIST circuit´s overhead is under 1.3% for a 1-Mbit DRAM and under 0.3% for a 16-Mbit DRAM. The BIST design presented for embedded DRAM supports built-in self-diagnosis by feeding error information to the external tester. Moreover, using a specific test sequence, it can test for critical timing faults, reducing tester time for ac parametric test. The design supports wafer test, pre-burn-in test, burn-in, and final test. It is field-programmable; the user can program test algorithms using predetermined test elements (such as march elements, surround test elements, and refresh modes). The user can optimize the hardware for a specific embedded DRAM with a set of predetermined test elements. Our design is different from the microprogram-controlled BIST described by J. Dreibelbis et al. (1998) which has greater flexibility but higher overhead. Because our design begins at the register-transfer language level, test element insertion (for higher test coverage) and deletion (for lower hardware overhead are relatively easy
Keywords :
DRAM chips; built-in self test; embedded systems; programmable circuits; March C algorithm; built-in self-diagnosis; critical timing faults; embedded DRAM; error information; external tester; field-programmable; march elements; microprogram-controlled BIST; pre-burn-in test; predetermined test elements; programmable BIST core; programmable BIST design; register-transfer language level; test element insertion; test modes; test sequence; wafer test; Automatic testing; Built-in self-test; Circuit faults; Circuit testing; Decoding; Hardware; Logic testing; Random access memory; Read-write memory; Redundancy;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/54.748806
Filename :
748806
Link To Document :
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