DocumentCode
1477667
Title
GaAs planar doped barrier diodes for millimetre-wave detector applications
Author
Kearney, M.J. ; Condie, A. ; Dale, I.
Author_Institution
GEC-Marconi Ltd., Wembley, UK
Volume
27
Issue
9
fYear
1991
fDate
4/25/1991 12:00:00 AM
Firstpage
721
Lastpage
722
Abstract
Epitaxially grown GaAs planar doped barrier diodes have been designed and fabricated into coplanar structures specifically for millimetre-wave zero-bias detector applications. Results at 35 GHz and 94 GHz show that the tangential sensitivity, voltage sensitivity and dynamic range of these devices can significantly exceed those of any comparable Schottky diode detector. This is the first report of such a result.
Keywords
III-V semiconductors; gallium arsenide; semiconductor diodes; solid-state microwave devices; 35 GHz; 94 GHz; EHF; GaAs planar doped barrier diodes; coplanar structures; dynamic range; millimetre-wave detector; millimetre-wave zero-bias detector applications; semiconductors; tangential sensitivity; voltage sensitivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910448
Filename
74881
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