Title :
Preparation of Sr2AlTaO6 thin films by metalorganic chemical vapor deposition
Author :
Takahashi, Yoshihiro ; Zama, Hideaki ; Utagawa, Tadashi ; Morishita, Tadataka ; Tanabe, Keiichi
Author_Institution :
Supercond. Res. Lab., ISTEC, Tokyo, Japan
fDate :
3/1/2001 12:00:00 AM
Abstract :
Sr2AlTaO6 (SAT) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) using a double-metal alkoxide TaAl(O-iC3H7)8 and Sr(DPM)2-2tetraene as precursors. The former precursor was found to be stable for more than 300 h to prepare nearly stoichiometric thin films with the Ta/Al ratio of 1.0-1.3. High crystallinity of the films on SrTiO3 substrates with the Sr/Al ratio slightly smaller than 2.0 was confirmed by X-ray diffraction. Moreover, 200 nm-thick SAT thin films were deposited on YBa2Cu3O 7-δ thick films grown by liquid phase epitaxy. Measurements of dielectric properties using a parallel capacitor structure 200 μm in diameter confirmed the conductance of the film lower than 10-8 S as well as an almost temperature-independent dielectric constant of approximately 24. These results indicate that SAT films grown by MOCVD are promising to be incorporated in high-Tc multilayer structures for electronic devices
Keywords :
MOCVD coatings; X-ray diffraction; aluminium compounds; insulating thin films; strontium compounds; 200 mum; 200 nm; 300 h; MOCVD; Sr2AlTaO6; Sr2AlTaO6 thin films; YBa2Cu3O7; dielectric properties; high crystallinity; liquid phase epitaxy; metalorganic chemical vapor deposition; nearly stoichiometric thin films; parallel capacitor structure; Chemical vapor deposition; Crystallization; Dielectric thin films; MOCVD; Sputtering; Strontium; Substrates; Thick films; Transistors; X-ray diffraction;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
