DocumentCode :
1477858
Title :
Fabrication of NdGaO3 buffer layer on textured Ni tape for long length coated conductors
Author :
Kim, S.B. ; Maeda, T. ; Yamada, Y. ; Suga, T. ; Matsumoto, K. ; Watanabe, T. ; Hirabayashi, I.
Author_Institution :
Supercond. Res. Lab., ISTEC, Tokyo, Japan
Volume :
11
Issue :
1
fYear :
2001
fDate :
3/1/2001 12:00:00 AM
Firstpage :
3317
Lastpage :
3320
Abstract :
Biaxially aligned NdGaO3 (NGO) layers were successfully fabricated on the single crystalline substrates (STO, LAO and NiO/STO) and metallic substrate (NiO/Ni) by pulsed laser deposition (PLD) method and post-annealing process. And also, the good biaxial orientation YBa 2Cu3O7-δ (YBCO) films on NGO layers were deposited by liquid phase epitaxy (LPE) method. From this work, it has been proved for the first time that NGO thin film can be used as a seed layer for the YBCO thick film deposition by LPE method. And it is clear that the NGO thin film growth process, where biaxially orientated films were deposited using PLD at room temperature followed by simple post-annealing process, is very effective for the uniform long length coated conductor production
Keywords :
annealing; barium compounds; high-temperature superconductors; liquid phase epitaxial growth; neodymium compounds; nickel; pulsed laser deposition; superconducting epitaxial layers; superconducting tapes; yttrium compounds; 20 C; LAO; LPE; LaAlO3; NdGaO3 buffer layer; NiO; NiO/Ni; NiO/STO; STO; SrTiO3; YBCO films; YBa2Cu3O7-δ; YBa2Cu3O7-NdGaO3-Ni; biaxial orientation; biaxially aligned NdGaO3; biaxially orientated films; fabrication; liquid phase epitaxy; long length coated conductors; metallic substrate; post-annealing; pulsed laser deposition; room temperature; seed layer; single crystalline substrates; textured Ni tape; Conductive films; Crystallization; Epitaxial growth; Optical device fabrication; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Thick films; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.919772
Filename :
919772
Link To Document :
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