DocumentCode
1477858
Title
Fabrication of NdGaO3 buffer layer on textured Ni tape for long length coated conductors
Author
Kim, S.B. ; Maeda, T. ; Yamada, Y. ; Suga, T. ; Matsumoto, K. ; Watanabe, T. ; Hirabayashi, I.
Author_Institution
Supercond. Res. Lab., ISTEC, Tokyo, Japan
Volume
11
Issue
1
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
3317
Lastpage
3320
Abstract
Biaxially aligned NdGaO3 (NGO) layers were successfully fabricated on the single crystalline substrates (STO, LAO and NiO/STO) and metallic substrate (NiO/Ni) by pulsed laser deposition (PLD) method and post-annealing process. And also, the good biaxial orientation YBa 2Cu3O7-δ (YBCO) films on NGO layers were deposited by liquid phase epitaxy (LPE) method. From this work, it has been proved for the first time that NGO thin film can be used as a seed layer for the YBCO thick film deposition by LPE method. And it is clear that the NGO thin film growth process, where biaxially orientated films were deposited using PLD at room temperature followed by simple post-annealing process, is very effective for the uniform long length coated conductor production
Keywords
annealing; barium compounds; high-temperature superconductors; liquid phase epitaxial growth; neodymium compounds; nickel; pulsed laser deposition; superconducting epitaxial layers; superconducting tapes; yttrium compounds; 20 C; LAO; LPE; LaAlO3; NdGaO3 buffer layer; NiO; NiO/Ni; NiO/STO; STO; SrTiO3; YBCO films; YBa2Cu3O7-δ; YBa2Cu3O7-NdGaO3-Ni; biaxial orientation; biaxially aligned NdGaO3; biaxially orientated films; fabrication; liquid phase epitaxy; long length coated conductors; metallic substrate; post-annealing; pulsed laser deposition; room temperature; seed layer; single crystalline substrates; textured Ni tape; Conductive films; Crystallization; Epitaxial growth; Optical device fabrication; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Thick films; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.919772
Filename
919772
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