Preparation of oxide buffers on a cube-textured Ni substrate for coated conductor by CVD

CeO₂ and NiO films have been grown by metal-organic chemical vapor deposition (MOCVD) on cube-textured Ni substrate. At a lower deposition temperature of 400°C, an amorphous film was formed. Deposited CeO₂ film showed a mixed texture of (100)⟨001⟩ and (100)⟨011⟩ orientations. Depending on the deposition condition, the transition from (100)⟨001⟩ texture to (100)⟨011⟩ orientation was observed for the CeO₂ film. The NiO film was deposited at 470°C for 10 min. Deposition pressure was 10 Torr and the oxygen partial pressure was 0.91 Torr. The X-ray rocking curve and φ-scan showed that the NiO film has a bi-axial texture with a (100)⟨001⟩ orientation. The out-of-plane and the in-plane deviation were measured as 4.2° and 6~7° from the FWHM of (200) and (111) planes, respectively