DocumentCode :
1477896
Title :
Detailed study of AlAs-oxidized apertures in VCSEL cavities for optimized modal performance
Author :
Demeulenaere, B. ; Bienstman, P. ; Dhoedt, B. ; Baets, R.G.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Volume :
35
Issue :
3
fYear :
1999
fDate :
3/1/1999 12:00:00 AM
Firstpage :
358
Lastpage :
367
Abstract :
We present a numerical optical model for calculating threshold material gain in vertical-cavity surface-emitting lasers. It is based on a vectorial solution of Maxwell´s equations and therefore gives exact results where other approaches fail, e.g., in the case of oxide-confined devices, which have high lateral index contrasts. Results are given concerning the influence of oxide window thickness and position on threshold gain and modal stability. We also propose an intuitive plane-wave model to enhance the physical understanding of these effects
Keywords :
Maxwell equations; aluminium compounds; laser cavity resonators; laser theory; refractive index; semiconductor device models; surface emitting lasers; vectors; AlAs; AlAs-oxidized apertures; Maxwell´s equations; VCSEL cavities; high lateral index contrasts; intuitive plane-wave model; modal stability; numerical optical model; optimized modal performance; oxide window thickness; oxide-confined devices; physical understanding; threshold gain; threshold material gain; vectorial solution; Apertures; Laser modes; Laser theory; Optical diffraction; Optical pumping; Optical sensors; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.748841
Filename :
748841
Link To Document :
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