DocumentCode :
1477929
Title :
Optical thermometry through infrared excited upconversion fluorescence emission in Er3+- and Er3+-Yb3+ -doped chalcogenide glasses
Author :
dos Santos, P.V. ; de Araujo, M.T. ; Gouveia-Neto, A.S. ; Neto, J. A Medeiros ; Sombra, A.S.B.
Author_Institution :
Dept. de Fisica, Univ. Fed. de Alagoas, Maceio, Brazil
Volume :
35
Issue :
3
fYear :
1999
fDate :
3/1/1999 12:00:00 AM
Firstpage :
395
Lastpage :
399
Abstract :
Optical thermometry based upon infrared excited upconversion fluorescence emission in Er3+- and Er3+-Yb3+ - doped Ga2S3-La2O3 chalcogenide glasses excited at 1.54 and 1.06 μm, respectively, is presented. Temperature sensing in the region of 20°C-220°C with 0.3°C accuracy using excitation powers readily obtainable from commercially available semiconductor lasers was achieved. The temperature sensing approach is independent of fluctuations in excitation intensity and transmission and requires a simple and low-cost signal detection and processing system. The results also indicate that the glassy host material plays a major role in the performance of the sensing system
Keywords :
chalcogenide glasses; erbium; fluorescence; impurity absorption spectra; infrared spectra; measurement errors; optical glass; spectral methods of temperature measurement; ytterbium; 1.06 mum; 1.54 mum; 20 to 220 C; Er3+-Yb3+-doped chalcogenide glasses; Er3+-doped chalcogenide glasses; Ga2S3-La2O3:Er,Yb; excitation intensity; glassy host material; infrared excited upconversion fluorescence emission; low-cost signal detection; optical thermometry; processing system; semiconductor lasers; sensing system; temperature sensing approach; Erbium; Fluctuations; Fluorescence; Glass; Laser excitation; Optical sensors; Power lasers; Semiconductor lasers; Stimulated emission; Temperature sensors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.748846
Filename :
748846
Link To Document :
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