DocumentCode :
1477963
Title :
High Q Single Crystal Silicon Micromechanical Resonators With Hybrid Etching Process
Author :
Wu, Guoqiang ; Xu, Dehui ; Xiong, Bin ; Wang, Yuelin
Author_Institution :
Grad. Sch. of Chinese Acad. of Sci., Beijing, China
Volume :
12
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
2414
Lastpage :
2415
Abstract :
This letter presents a hybrid silicon etching-based technique for single crystal silicon micromechanical resonators fabrication. The proposed method differs from previous works by combining a front-side wet anisotropic pre-etching and a front-side DRIE dry anisotropic post-etching in micromachining micromechanical resonators. The wet etching is used to pre-etch a cavity for structure release in the substrate, while the post- dry etching is employed to fabricate and release the resonator structures simultaneously. A 4.126-MHz square plate Lamé-mode resonator has been successfully fabricated using this approach. An impressive quality factor (Q) as high as 5.34×106 is experimentally measured at a pressure of 0.06 mbar, corresponding to a frequency Q product of 2.2×1013.
Keywords :
elemental semiconductors; etching; micromachining; micromechanical resonators; silicon; Si; frequency 4.126 MHz; front-side DRIE dry anisotropic post-etching; front-side wet anisotropic preetching; high Q single crystal silicon micromechanical resonators; hybrid etching process; micromachining micromechanical resonators; post-dry etching; quality factor; square plate Lamé-mode resonator; Cavity resonators; Fabrication; Resonant frequency; Silicon; Substrates; Wet etching; Dry release fabrication; hybrid etching; micromechanical resonators; pre-etched cavity;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2012.2191772
Filename :
6174434
Link To Document :
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