DocumentCode
1477963
Title
High
Single Crystal Silicon Micromechanical Resonators With Hybrid Etching Process
Author
Wu, Guoqiang ; Xu, Dehui ; Xiong, Bin ; Wang, Yuelin
Author_Institution
Grad. Sch. of Chinese Acad. of Sci., Beijing, China
Volume
12
Issue
7
fYear
2012
fDate
7/1/2012 12:00:00 AM
Firstpage
2414
Lastpage
2415
Abstract
This letter presents a hybrid silicon etching-based technique for single crystal silicon micromechanical resonators fabrication. The proposed method differs from previous works by combining a front-side wet anisotropic pre-etching and a front-side DRIE dry anisotropic post-etching in micromachining micromechanical resonators. The wet etching is used to pre-etch a cavity for structure release in the substrate, while the post- dry etching is employed to fabricate and release the resonator structures simultaneously. A 4.126-MHz square plate Lamé-mode resonator has been successfully fabricated using this approach. An impressive quality factor (Q) as high as 5.34×106 is experimentally measured at a pressure of 0.06 mbar, corresponding to a frequency Q product of 2.2×1013.
Keywords
elemental semiconductors; etching; micromachining; micromechanical resonators; silicon; Si; frequency 4.126 MHz; front-side DRIE dry anisotropic post-etching; front-side wet anisotropic preetching; high Q single crystal silicon micromechanical resonators; hybrid etching process; micromachining micromechanical resonators; post-dry etching; quality factor; square plate Lamé-mode resonator; Cavity resonators; Fabrication; Resonant frequency; Silicon; Substrates; Wet etching; Dry release fabrication; hybrid etching; micromechanical resonators; pre-etched cavity;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2012.2191772
Filename
6174434
Link To Document