• DocumentCode
    1477963
  • Title

    High Q Single Crystal Silicon Micromechanical Resonators With Hybrid Etching Process

  • Author

    Wu, Guoqiang ; Xu, Dehui ; Xiong, Bin ; Wang, Yuelin

  • Author_Institution
    Grad. Sch. of Chinese Acad. of Sci., Beijing, China
  • Volume
    12
  • Issue
    7
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    2414
  • Lastpage
    2415
  • Abstract
    This letter presents a hybrid silicon etching-based technique for single crystal silicon micromechanical resonators fabrication. The proposed method differs from previous works by combining a front-side wet anisotropic pre-etching and a front-side DRIE dry anisotropic post-etching in micromachining micromechanical resonators. The wet etching is used to pre-etch a cavity for structure release in the substrate, while the post- dry etching is employed to fabricate and release the resonator structures simultaneously. A 4.126-MHz square plate Lamé-mode resonator has been successfully fabricated using this approach. An impressive quality factor (Q) as high as 5.34×106 is experimentally measured at a pressure of 0.06 mbar, corresponding to a frequency Q product of 2.2×1013.
  • Keywords
    elemental semiconductors; etching; micromachining; micromechanical resonators; silicon; Si; frequency 4.126 MHz; front-side DRIE dry anisotropic post-etching; front-side wet anisotropic preetching; high Q single crystal silicon micromechanical resonators; hybrid etching process; micromachining micromechanical resonators; post-dry etching; quality factor; square plate Lamé-mode resonator; Cavity resonators; Fabrication; Resonant frequency; Silicon; Substrates; Wet etching; Dry release fabrication; hybrid etching; micromechanical resonators; pre-etched cavity;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2012.2191772
  • Filename
    6174434