Title :
An Amorphous-Silicon Operational Amplifier and Its Application to a 4-Bit Digital-to-Analog Converter
Author :
Tarn, Yi-Chuan ; Ku, Po-Chih ; Hsieh, Hsieh-Hung ; Lu, Liang-Hung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
5/1/2010 12:00:00 AM
Abstract :
A circuit topology suitable for the implementation of operational amplifiers (OPAMPs) in an amorphous-silicon (a-Si) thin-film-transistor (TFT) technology is presented in this paper. Due to the use of a positive feedback in the input differential pair, the gain of the OPAMP is effectively boosted, facilitating analog circuit designs for system-on-panel (SoP) applications. Based on the proposed technique, a 4-bit digital-to-analog converter (DAC) prototype, which consists of a resistor string and a unity-gain buffer, is developed. The DAC is implemented by using an 8-¿m a-Si NTFT process. Operated at a supply voltage of 25 V, the fabricated circuit consumes a dc power of 3.68 mW. For an output voltage range from 9.5 to 12.5 V, the measurement results indicate a differential non-linearity (DNL) of ±0.216 LSB and an integral non-linearity (INL) of ±0.667 LSB. With a settling time less than 1.1 ms, the DAC circuit can operate at a maximum conversion rate of 0.9 kS/s.
Keywords :
amorphous semiconductors; digital-analogue conversion; operational amplifiers; silicon; thin film transistors; DAC circuit; amorphous silicon operational amplifier; amorphous silicon thin film transistor; analog circuit; circuit topology; digital-to-analog converter; operational amplifiers; resistor string; system-on-panel applications; unity gain buffer; Circuit topology; Consumer electronics; Digital-analog conversion; Fabrication; Feedback; Operational amplifiers; Prototypes; Resistors; Thin film transistors; Voltage; Amorphous silicon (a-Si); digital-to-analog converters (DACs); operational amplifiers (OPAMPs); positive feedback; resistor string; thin-film transistors; unity-gain buffer;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2010.2043886