Electrical properties and interface chemistry in the Ti/3C-SiC system

Author

Touati, Ferid ; Takemasa, Kiminori ; Saji, Manabu

Author_Institution

Fac. of Technol. of Dammam, Saudi Arabia

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

444

Lastpage

448

Abstract

Characterizations were performed to determine the properties of Ti contacts on 3C-SiC. Both titanium carbides and titanium silicides were studied carefully following heat treatments from 600 to 1000°C. The peak associated with titanium silicides in Auger Si spectrum is identified. Structural and chemical analyzes using AES, XPS, and XRD revealed how the electrical properties of the contacts correlate with the interface chemistry. It is found that while the carbide improves the ohmic behavior of the contacts, the cubic structure disilicide C49 TiSi ₂ formed at the interface at above 700°C is closely related to the lowering in the contact resistance. The barrier height decreases from 0.53 eV for as-deposited films to 0.44 eV due to annealing. The contacts maintained stable electrical characteristics after annealing at 600°C for extended periods of time

Keywords

Auger electron spectroscopy; X-ray diffraction; X-ray photoelectron spectra; annealing; contact resistance; ohmic contacts; semiconductor materials; semiconductor-metal boundaries; silicon compounds; titanium; 0.44 eV; 600 to 1000 degC; AES; Auger spectrum; Ti-SiC; XPS; XRD; annealing; barrier height; chemical analyses; contact resistance; heat treatments; interface chemistry; ohmic behavior; stable electrical characteristics; Annealing; Argon; Chemical analysis; Chemical technology; Chemistry; Contacts; Silicides; Silicon carbide; Titanium; X-ray scattering;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748860

Filename

748860