Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

Author

Defives, Dominique ; Noblanc, Olivier ; Dua, C. ; Brylinski, Christian ; Barthula, Marc ; Aubry-Fortuna, V. ; Meyer, Françoise

Author_Institution

Lab. Central de Recherches, Thomson-CSF, Orsay, France

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

449

Lastpage

455

Abstract

Forward density-voltage (J-V) measurements of titanium/4H-SiC Schottky rectifiers are presented in a large temperature range. While some of the devices present a behavior in accordance with the thermionic current theory, others present an excess forward current at low voltage level. This anomaly appears more or less depending on the rectifier and on the temperature. A model based on two parallel Schottky rectifiers with different barrier heights is presented. The characteristics show good agreement. It is shown that the excess current at low voltage can be explained by a lowering of the Schottky barrier in localized regions. A proposal for the physical origin of these low barrier height areas is given

Keywords

Schottky barriers; Schottky diodes; semiconductor device measurement; semiconductor device models; semiconductor materials; silicon compounds; solid-state rectifiers; titanium; Schottky rectifiers; Ti-SiC; barrier heights; barrier inhomogeneities; electrical characteristics; excess forward current; forward density-voltage measurements; localized regions; parallel Schottky rectifiers; temperature range; thermionic current theory; Annealing; Current density; Density measurement; Doping; Electric variables; Low voltage; Rectifiers; Schottky barriers; Silicon carbide; Titanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748861

Filename

748861