High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Author

Saxena, Vik ; Su, Jian Nong ; Steckl, Andrew J.

Author_Institution

Lucent Technol., Orlando, FL, USA

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

456

Lastpage

464

Abstract

We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I-V) temperature and capacitance-voltage (C-V) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10⁶ to 10 at 27°C and in excess of 10⁶ up to 300°C

Keywords

Auger electron spectroscopy; Schottky barriers; Schottky diodes; X-ray diffraction; high-temperature electronics; nickel; platinum; semiconductor device breakdown; semiconductor device measurement; semiconductor materials; silicon compounds; solid-state rectifiers; 1 kV; 27 to 300 degC; Auger electron spectroscopy; Ni-SiC; ON/OFF current ratios; Pt-SiC; Schottky diodes; X-ray diffraction; barrier height; breakdown voltages; capacitance-voltage temperature characteristics; current-voltage temperature characteristics; electric field termination; fabrication procedure; high-temperature performance; metal field plate termination; metal-oxide overlap structure; ohmic contact formation; rectifying behavior; Capacitance measurement; Capacitance-voltage characteristics; Electrons; Fabrication; Ohmic contacts; Schottky diodes; Silicon carbide; Spectroscopy; Temperature; X-ray diffraction;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748862

Filename

748862