Title :
6H-SiC p+-n junctions fabricated by beryllium implantation
Author :
Ramungul, Nudjarin ; Khemka, Vishnu ; Zheng, Yingping ; Patel, Rupal ; Chow, T. Paul
Author_Institution :
Thai Ind. Stand. Inst., Thailand
fDate :
3/1/1999 12:00:00 AM
Abstract :
The use of beryllium (Be) as an alternate p-type dopant for implanted silicon carbide (SiC) p+-n junctions is experimentally demonstrated. The implanted layers have been characterized with photoluminescence (PL) as well as secondary ion mass spectrometry (SIMS) measurements. In comparison with boron implanted p +-n junctions, Be-implanted junctions show improvement in the forward characteristics while exhibiting slightly higher reverse leakages. The activation energies extracted from the forward conduction and reverse leakage characteristics of the Be-diodes are 1.5 eV, and 0.13 eV, respectively. Moreover, activation energy extraction in the forward ohmic region reveals the Be impurity level at 0.38±0.04 eV. The minority carrier lifetime extracted from reverse recovery measurements is as high as 160 ns for the Be-diodes compared to 82 ns obtained for the B-diodes
Keywords :
beryllium; carrier lifetime; ion implantation; leakage currents; minority carriers; photoluminescence; power semiconductor diodes; secondary ion mass spectroscopy; semiconductor materials; silicon compounds; solid-state rectifiers; 0.13 eV; 1.5 eV; 160 ns; SiC:Be; activation energy extraction; forward characteristics; forward conduction; forward ohmic region; minority carrier lifetime; photoluminescence; reverse leakages; reverse recovery measurements; secondary ion mass spectrometry; Aluminum; Boron; Doping; Manufacturing industries; Ohmic contacts; P-n junctions; Photoluminescence; Silicon carbide; Temperature; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
