Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC

Author

Mathur, M.M. ; Cooper, James A., Jr.

Author_Institution

Hewlett Packard Inc., San Jose, CA, USA

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

520

Lastpage

524

Abstract

Time-dependent-dielectric-breakdown (TDDB) measurements are reported on n-type 6H-SiC MOS capacitors formed by thermal oxidation. Failure distributions are obtained at 145, 240, and 305°C, and intrinsic mean-time-to-failure (MTTF) is plotted as a function of oxide field at each temperature. The results indicate that oxide reliability will not be a significant limitation to MOS-based power switching devices at temperatures up to 150°C. However, long-term operation of SiC MOS devices at temperatures higher than 250°C may not be practical

Keywords

MOS capacitors; failure analysis; high-temperature electronics; oxidation; power semiconductor switches; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; 145 to 305 C; MOS capacitor; SiC; failure distribution; high temperature operation; mean-time-to-failure; n-type 6H-SiC; power switching device; reliability; thermal oxide; time dependent dielectric breakdown; Argon; Doping; MOS capacitors; MOS devices; Oxidation; Photonic band gap; Power semiconductor switches; Silicon carbide; Substrates; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748871

Filename

748871