DocumentCode :
1478145
Title :
Transmission electron microscopy investigation of texture development in magnesium oxide buffer layers
Author :
Koritala, Rachel E. ; Chudzik, Michael P. ; Luo, Zhiping ; Miller, Dean J. ; Kannewurf, Carl R. ; Balachandran, Uthamalingam
Author_Institution :
Div. of Energy Technol., Argonne Nat. Lab., IL, USA
Volume :
11
Issue :
1
fYear :
2001
fDate :
3/1/2001 12:00:00 AM
Firstpage :
3473
Lastpage :
3476
Abstract :
Biaxially textured magnesium oxide (MgO) buffer layers were grown by inclined substrate deposition and examined before YBa2Cu 3O7-x deposition to optimize their texture. Transmission electron microscopy of buffer layers in both cross-sectional and plan view was used to investigate film microstructure and texture development as a function of deposition thickness (0.05-3 μm) and substrate inclination angle (0-55° from the substrate normal). It was determined that the combined effects of preferential growth of the {200} equilibrium crystal habit of MgO and shadowing by columnar grains led to the development of off-axis (200)-textured films
Keywords :
barium compounds; crystal microstructure; electron beam deposition; high-temperature superconductors; magnesium compounds; substrates; surface texture; transmission electron microscopy; yttrium compounds; 0.05 to 3 mum; MgO; MgO buffer layers; YBa2Cu3O7-x deposition; YBa2Cu3O7; biaxially textured magnesium oxide; columnar grains; cross-sectional TEM; deposition thickness; film microstructure; inclined substrate deposition; magnesium oxide buffer layers; off-axis (200)-textured films; plan view; preferential growth; substrate inclination angle; texture development; transmission electron microscopy; {200} equilibrium crystal habit; Buffer layers; Critical current density; Laboratories; Magnesium oxide; Microstructure; Substrates; Superconducting films; Transmission electron microscopy; US Department of Energy; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.919811
Filename :
919811
Link To Document :
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