• DocumentCode
    1478174
  • Title

    `Zero¿ decay analogue store using guarded gate MOSFETs

  • Author

    Hart, B.L. ; Barker, R.W.J.

  • Volume
    42
  • Issue
    3
  • fYear
    1972
  • fDate
    3/1/1972 12:00:00 AM
  • Firstpage
    114
  • Lastpage
    116
  • Abstract
    An analogue store technique, which uses a guarded gate m.o.s.f.e.t. amplifier assembly and a novel bipolar transistor switching scheme, permits the simultaneous attainment of an acquisition time limited by amplifier slewing rate and a mean `hold¿ decay rate of only 170¿ V/s for a 10 pF storage capacitor.
  • Keywords
    analogue storage; field effect transistors; semiconductor storage devices; MOSFET amplifier; analogue store technique; bipolar transistor switching scheme; guarded gate;
  • fLanguage
    English
  • Journal_Title
    Radio and Electronic Engineer
  • Publisher
    iet
  • ISSN
    0033-7722
  • Type

    jour

  • DOI
    10.1049/ree.1972.0020
  • Filename
    5268385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1478174