• DocumentCode
    1478177
  • Title

    SiC-based phototransistor with a tunnel MOS emitter

  • Author

    Grekhov, Igor V. ; Ivanov, Pavel A. ; Samsonova, Tatyana P. ; Shulekin, Alexander F. ; Vexler, Mikhail I.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    46
  • Issue
    3
  • fYear
    1999
  • fDate
    3/1/1999 12:00:00 AM
  • Firstpage
    577
  • Lastpage
    579
  • Abstract
    Au/tunnel-thin SiO2/n-6H-SiC structures have first been fabricated and shown to operate as tunnel MOS emitter phototransistors under reverse bias and UV-irradiation conditions (current gain reached 3-7). This paper contains details of sample preparation, measured device characteristics, and their interpretation
  • Keywords
    MIS devices; gold; inversion layers; phototransistors; semiconductor materials; silicon compounds; tunnel transistors; ultraviolet radiation effects; Au-SiO2-SiC; UV-irradiation conditions; current gain; device characteristics; phototransistor; reverse bias; sample preparation; tunnel MOS emitter; Charge carrier processes; Current measurement; Gold; MOSFETs; Photoconductivity; Photonic band gap; Phototransistors; Silicon carbide; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.748880
  • Filename
    748880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1478177