Title :
A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements
Author :
Siriex, Delphine ; Noblanc, Olivier ; Barataud, Denis ; Chartier, Eric ; Brylinski, Christian ; Quéré, Raymond
Author_Institution :
IRCOM, CNRS, Limoges, France
fDate :
3/1/1999 12:00:00 AM
Abstract :
In order to use SiC devices in CAD nonlinear circuits, a nonlinear model of 4H-SiC MESFET has been obtained using a technique based on pulsed I(V) characteristics and pulsed S-parameter measurements. The nonlinear I-V drain-source current was represented using a table-based model which was implemented in a harmonic balance simulator. Its accuracy is shown by a comparison with active load-pull measurements
Keywords :
S-parameters; characteristics measurement; circuit CAD; microwave field effect transistors; microwave measurement; microwave power transistors; power MESFET; semiconductor device measurement; semiconductor device models; CAD-oriented nonlinear model; MESFET; SiC; active load-pull measurements; drain-source current; harmonic balance simulator; pulsed I(V) characteristics; pulsed S-parameter measurements; table-based model; Gold; MESFET circuits; Nonlinear circuits; Power measurement; Pulse circuits; Pulse measurements; Scattering parameters; Silicon carbide; Thermal conductivity; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
