A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements

Author

Siriex, Delphine ; Noblanc, Olivier ; Barataud, Denis ; Chartier, Eric ; Brylinski, Christian ; Quéré, Raymond

Author_Institution

IRCOM, CNRS, Limoges, France

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

580

Lastpage

584

Abstract

In order to use SiC devices in CAD nonlinear circuits, a nonlinear model of 4H-SiC MESFET has been obtained using a technique based on pulsed I(V) characteristics and pulsed S-parameter measurements. The nonlinear I-V drain-source current was represented using a table-based model which was implemented in a harmonic balance simulator. Its accuracy is shown by a comparison with active load-pull measurements

Keywords

S-parameters; characteristics measurement; circuit CAD; microwave field effect transistors; microwave measurement; microwave power transistors; power MESFET; semiconductor device measurement; semiconductor device models; CAD-oriented nonlinear model; MESFET; SiC; active load-pull measurements; drain-source current; harmonic balance simulator; pulsed I(V) characteristics; pulsed S-parameter measurements; table-based model; Gold; MESFET circuits; Nonlinear circuits; Power measurement; Pulse circuits; Pulse measurements; Scattering parameters; Silicon carbide; Thermal conductivity; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748881

Filename

748881