Microwave characteristics of BARITT diodes based on silicon carbide

Author

Aroutiounian, Vladimir M. ; Buniatyan, Vahe V. ; Soukiassian, Patrick

Author_Institution

Yerevan State Univ., Armenia

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

585

Lastpage

588

Abstract

Microwave characteristics of barrier-injected (BARITT) diodes made of silicon carbide are investigated. It is shown that the negative resistance of p⁺-n-p⁺ structure made of different polytypes of SiC is an order of magnitude higher in absolute value in comparison with the Si p⁺-n-⁺ structure, all other factors being equal, even in the absence of trap levels (TLs). It is shown also that the dynamic negative resistance, in absolute value, the power output and efficiency increase with an increase of the concentration of traps. The effects of TLs in the band gap of the semiconductor on the impedance, power output, and efficiency of SiC BARITT diodes are examined,

Keywords

BARITT diodes; electron traps; microwave diodes; negative resistance devices; semiconductor device models; semiconductor materials; silicon compounds; BARITT diodes; SiC; dynamic negative resistance; efficiency; microwave characteristics; negative resistance; p⁺-n-p⁺ structure; polytypes; power output; trap levels; Delay; Electron traps; Hafnium; Impedance; Microwave devices; Microwave technology; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon carbide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748882

Filename

748882