Title :
S2-T1: GaN-on-diamond: A brief history
Author :
Ejeckam, F. ; Francis, Daniel ; Faili, F. ; Twitchen, Daniel ; Bolliger, Bruce ; Babic, Dubravko ; Felbinger, Jonathan
Author_Institution :
Element Six Technol., US Corp., Santa Clara, CA, USA
Abstract :
This paper chronicles the historical technical development of Gallium Nitride-on-Diamond wafers and transistor devices by the authors starting from 2003 until the current status in 2014. This paper is not exhaustive in scope; selected accounts have been omitted either inadvertently or to maintain brevity.
Keywords :
III-V semiconductors; diamond; gallium compounds; high electron mobility transistors; semiconductor technology; wide band gap semiconductors; GaN-C; HEMT; gallium nitride-on-diamond transistor devices; gallium nitride-on-diamond wafers; historical technical development; Diamonds; Gallium nitride; HEMTs; MODFETs; Radio frequency; Silicon; Substrates; GaN-on-Diamond; GaN-on-SiC; HEMTs;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location :
Ithaca, NY
DOI :
10.1109/LEC.2014.6951556
